STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 description STN410D is the nchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos tre nch technology. the STN410D has been designed specially to improve the overall effi ciency of dc/dc converters using either synchronous or conventional switching pwm co ntrollers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 to-251 part marking y: year code a: process code feature 30v/ 15.0a, r ds(on) = 40m @v gs = 10v 30v/8.0a, r ds(on) =50m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to252,to251 package design
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 30 v gatesource voltage vgss 12 v continuous drain current (tj=150 ) ta=25 ta=70 id 15.0 10.0 a pulsed drain current idm 30 a continuous source current (diode conduction) is 12 a power dissipation ta=25 ta=70 pd 25 12.5 w operation junction temperature tj 150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 60 /w
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,id=250ua 30 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 0.6 1.6 v gate leakage current i gss v ds =0v,v gs =12v 100 na zero gate voltage drain current i dss v ds =24v,v gs =0v 1 ua v ds =24v,v gs =0v t j =85 5 onstate drain current i d(on) v ds R 5v,v gs =4.5v 30 a drainsource on resistance r ds(on) v gs =10v,i d =15.0a v gs =4.5v,i d =8.0a 30 36 40 50 m forward transconductance gfs v ds =5v,i d =12a 20 s diode forward voltage v sd i s =1.0a,v gs =0v 1.2 v dynamic total gate charge q g v ds =10v,v ds =15v i d 8a 7 nc gatesource charge q gs 3.4 gatedrain charge q gd 1.78 input capacitance c iss v ds =15,v ds =15v f=1mhz 290 pf output capacitance c oss 60 reverse transfercapacitance c rss 75 turnon time t d(on) tr v dd =10v,r l = 1.8 v gen =3 4 ns 3.7 turnoff time t d(off) tf 15.9 2.6
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 typical characterictics
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 typical characterictics
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1
STN410D n channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN410D 2009. v1 to-252-2l package outline sop-8p
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